?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet tm february superfet fch47n60f _f133 600v n-channel mosfet features ?650v @t j = 150c ?typ. r ds(on) = 0.062 ? fast recovery type ( t rr = 240ns) ? ultra low gate charge (typ. q g = 210nc) ? low effective output capacitance (typ. c oss eff. = 420pf) ? 100% avalanche tested description superfet tm is, fairchild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system miniaturization and higher efficiency. absolute maximum ratings thermal characteristics g s d to-247 d g s symbol parameter fch47n60f unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 47 29.7 a a i dm drain current - pulsed (note 1) 141 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current (note 1) 47 a e ar repetitive avalanche energy (note 1) 41.7 mj dv/dt peak diode recovery dv/dt (note 3) 50 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 417 3.33 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. unit r jc thermal resistance, junction-to-case -- 0.3 c/w r cs thermal resistance, case-to-sink 0.24 -- c / w r ja thermal resistance, junction-to-ambient -- 41.7 c/w
2 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. i as = 18a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 47a, di/dt 1,200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fch47n60f fch47n60f_f133 to-247 - - 30 symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 600 -- -- v v gs = 0v, i d = 250 a, t j = 150 c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.6--v/ c bv ds drain-source avalanche breakdown voltage v gs = 0v, i d = 47a -- 700 -- v i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 10 100 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3.0--5.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 23.5a -- 0.062 0.073 g fs forward transconductance v ds = 40v, i d = 23.5a (note 4) -- 40 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 5900 8000 pf c oss output capacitance -- 3200 4200 pf c rss reverse transfer capacitance -- 250 -- pf c oss output capacitance v ds = 480v, v gs = 0v, f = 1.0mhz -- 160 -- pf c oss eff. effective output capacitance v ds = 0v to 400v, v gs = 0v -- 420 -- pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 47a r g = 25 (note 4, 5) -- 185 430 ns t r turn-on rise time -- 210 450 ns t d(off) turn-off delay time -- 520 1100 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 480v, i d = 47a v gs = 10v (note 4, 5) -- 210 270 nc q gs gate-source charge -- 38 -- nc q gd gate-drain charge -- 110 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 47 a i sm maximum pulsed drain-source diode forward current -- -- 141 a v sd drain-source diode forward voltage v gs = 0v, i s = 47a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 47a di f /dt =100a/ s (note 4) -- 240 -- ns q rr reverse recovery charge -- 2.04 -- c
3 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate volt age variation vs. source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 246810 10 0 10 1 10 2 - note 1. v ds = 40v 2. 250 s pulse test -55 c 150 c 25 c i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 20 40 60 80 100 120 140 160 180 200 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v * note : t j = 25 c r ds(on) [ ],drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 25 c 150 c * notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 5000 10000 15000 20000 25000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 50 100 150 200 250 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 47a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. safe operating area figure 10. maximum drain current vs. case temperature figure 10. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 23.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 s * notes : 1. t c = 25 c 2. t j = 150 c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 i d , drain current [a] t c , case temperature [ c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 * n otes : 1. z jc (t) = 0.3 c/w max. 2. d uty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fch47n60f _f133 rev. a. fch47n60f _f133 600v n-channel mosfet mechanical dimensions to-247ab (fks pkg code 001) dimensions in millimeters
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